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RF2335
4
Typical Applications * Broadband, Low Noise Gain Blocks * IF or RF Buffer Amplifiers * Driver Stage for Power Amplifiers * Final PA for Low Power Applications * Broadband Test Equipment
GENERAL PURPOSE AMPLIFIER
Product Description
The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.
1.60 + 0.01 0.400
1
4
GENERAL PURPOSE AMPLIFIERS
0.15 0.05
2.90 + 0.10
0.950
2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
!
Package Style: SOT 5 Lead
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features * DC to 6000MHz Operation * Internally matched Input and Output * 12dB Small Signal Gain * +33dBm Output IP3 * +17dBm Output Power * Good Gain Flatness
GND 1 GND 2 RF IN 3
5 RF OUT
4 GND
Ordering Information
RF2335 RF2335 PCBA General Purpose Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 001201
4-147
RF2335
Absolute Maximum Ratings Parameter
Supply Current Input RF Power Operating Ambient Temperature Storage Temperature
Rating
120 +20 -40 to +70 -60 to +150
Unit
mA dBm C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Specification Min. Typ. Max.
DC to 6000 3 13.7 13.1 12.4 11 10.6 10 9.8 1 5.6 1.8:1 1.7:1 +33 +17.3 17.2 5.0 65
Unit
MHz GHz dB dB dB dB dB dB dB dB dB
Condition
T=25C, ICC =65mA
4
GENERAL PURPOSE AMPLIFIERS
Frequency Range 3dB Bandwidth Gain
Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation
dBm dBm dB V mA
Power Supply
Device Operating Voltage Operating Current
Freq=100MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=5000MHz Freq=6000MHz 100MHz to 2000MHz Freq=1000MHz In a 50 system, DC to 2000MHz In a 50 system, DC to 2000MHz Freq=1000MHz50kHz, PTONE =-10dBm Freq=1000MHz Freq=2000MHz With 22 bias resistor At pin 5 with ICC =65mA
4-148
Rev A4 001201
RF2335
Pin 1 2 3 Function GND GND RF IN Description
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
RF OUT
Interface Schematic
4 5
GND RF OUT
4
RF IN
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 120 mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 3 VCC GND NC 1 C1 100 pF 2 3 4
233X410-
VCC P1-1 R1 22 L1 100 nH 5 C2 100 pF C3 100 pF C4 1 F
50 strip
J2 RF OUT
J1 RF IN
50 strip
Rev A4 001201
4-149
GENERAL PURPOSE AMPLIFIERS
( V SUPPLY - V DEVICE ) R = -----------------------------------------------------I CC
RF2335
Evaluation Board Layout Board Size 1" x 1"
4
GENERAL PURPOSE AMPLIFIERS
4-150
Rev A4 001201

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